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Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors

Sadao Adachi, Peter Capper (Series Editor), Safa Kasap (Series Editor), Arthur Willoughby (Series Editor)
ISBN: 978-0-470-74369-0
422 pages
April 2009
Properties of Semiconductor Alloys: Group-IV, III-V and II-VI Semiconductors (0470743697) cover image
The main purpose of this book is to provide a comprehensive treatment of the materials aspects of group-IV, III−V and II−VI semiconductor alloys used in various electronic and optoelectronic devices. The topics covered in this book include the structural, thermal, mechanical, lattice vibronic, electronic, optical and carrier transport properties of such semiconductor alloys. The book reviews not only commonly known alloys (SiGe, AlGaAs, GaInPAs, and ZnCdTe) but also new alloys, such as dilute-carbon alloys (CSiGe, CSiSn, etc.), III−N alloys, dilute-nitride alloys (GaNAs and GaInNAs) and Mg- or Be-based II−VI semiconductor alloys. Finally there is an extensive bibliography included for those who wish to find additional information as well as tabulated values and graphical information on the properties of semiconductor alloys.
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Series Preface.


Abbreviations and Acronyms.

Introductory Remarks.

A.1 An Alloy and a Compound.

A.2 Grimm–Sommerfeld Rule.

A.3 An Interpolation Scheme.


1 Structural Properties.

1.1 Ionicity.

1.2 Elemental Isotopic Abundance and Molecular Weight.

1.3 Crystal Structure.

1.4 Lattice Constant and Related Parameters.

1.5 Coherent Epitaxy and Strain Problem.

1.6 Structural Phase Transition.

1.7 Cleavage Plane.


2 Thermal Properties.

2.1 Melting Point and Related Parameters.

2.2 Specific Heat.

2.3 Debye Temperature.

2.4 Thermal Expansion Coefficient.

2.5 Thermal Conductivity and Diffusivity.


3 Elastic Properties.

3.1 Elastic Constant.

3.2 Third-order Elastic Constant.

3.3 Young’s Modulus, Poisson’s Ratio and Similar Properties.

3.4 Microhardness.

3.5 Sound Velocity.


4 Lattice Dynamic Properties.

4.1 Phonon Dispersion Relationships.

4.2 Phonon Frequency.

4.3 Mode Grüneisen Parameter.

5 Collective Effects and Some Response Characteristics.

5.1 Piezoelectric Constant.

5.2 Fröhlich Coupling Constant.


6 Energy-band Structure: Energy-band Gaps.

6.1 Introductory Remarks.

6.2 Group-IV Semiconductor Alloy.

6.3 III–V Semiconductor Ternary Alloy.

6.4 III–V Semiconductor Quaternary Alloy.

6.5 II–VI Semiconductor Alloy.


7 Energy-band Structure: Effective Masses.

7.1 Introductory Remarks.

7.2 Group-IV Semiconductor Alloy.

7.3 III–V Semiconductor Ternary Alloy.

7.4 III–V Semiconductor Quaternary Alloy.

7.5 II–VI Semiconductor Alloy.

7.6 Concluding Remarks.


8 Deformation Potentials.

8.1 Intravalley Deformation Potential: I Point.

8.2 Intravalley Deformation Potential: High-symmetry Points.

8.3 Intervalley Deformation Potential.


9 Heterojunction Band Offsets and Schottky Barrier Height.

9.1 Heterojunction Band Offsets.

9.2 Schottky Barrier Height.


10 Optical Properties.

10.1 Introductory Remarks.

10.2 Group-IV Semiconductor Alloy.

10.3 III–V Semiconductor Ternary Alloy.

10.4 III–V Semiconductor Quaternary Alloy.

10.5 II–VI Semiconductor Alloy.


11 Elasto-optic, Electro-optic and Nonlinear Optical Properties.

11.1 Elasto-optic Effect.

11.2 Linear Electro-optic Constant.

11.3 Quadratic Electro-optic Constant.

11.4 Franz–Keldysh Effect.

11.5 Nonlinear Optical Constant.


12 Carrier Transport Properties.

12.1 Introductory Remarks.

12.2 Low-field Mobility.

12.3 High-field Transport.

12.4 Minority-carrier Transport.

12.5 Impact Ionization Coefficient.



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