Electrical Characterization of Organic Electronic Materials and Devices

1 General concepts.

1.1 Introduction.

1.2 Conduction mechanism.

1.3 Chemistry and the energy diagram.

1.4 Disordered materials and the Meyer–Neldel Rule.

1.5 Devices.

1.6 Optoelectronics/photovoltaics.

2 Two-terminal devices: DC current.

2.1 Conductance.

2.2 DC current of a Schottky barrier.

2.3 DC measurements.

3 Two-terminal devices: Admittance spectroscopy.

3.1 Admittance spectroscopy.

3.2 Geometrical capacitance.

3.3 Equivalent circuits.

3.4 Resistor; SCLC.

3.5 Schottky diodes.

3.6 MIS diodes.

3.7 MIS tunnel diode.

3.8 Noise measurements.

4 Two-terminal devices: Transient techniques.

4.1 Kinetics: Emission and capture of carriers.

4.2 Current transient spectroscopy.

4.3 Thermally stimulated current.

4.4 Capacitance transient spectroscopy.

4.5 Deep-level transient spectroscopy.

4.6 Q-DLTS.

5 Time-of-flight.

5.1 Introduction.

5.2 Drift transient.

5.3 Diffusive transient.

5.4 Violating einstein’s relation.

5.5 Multi-trap-and-release.

5.6 Anomalous transients.

5.7 High current (space charge) transients.

5.8 Summary of the ToF technique.

6 Thin-film transistors.

6.1 Field-effect transistors.

6.2 MOS-FET.

6.3 Introducing TFTs.

6.4 Basic model.

6.5 Justification for the two-dimensional approach.

6.6 Ambipolar materials and devices.

6.7 Contact effects and other simple nonidealities.

6.8 Metallic contacts in TFTs.

6.9 Normally-on TFTs.

6.10 Effects of traps.

6.11 Admittance spectroscopy for the determination of the mobility in TFTs.

6.12 Summary of TFT measurements.

6.13 Diffusion transistor.

Appendix A A Derivation of Equations (2.21), (2.25), (6.95) and (6.101).

Bibliography.

Index.