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Insulated Gate Bipolar Transistor IGBT Theory and Design
ISBN: 978-0-471-23845-4
Hardcover
648 pages
August 2003, Wiley-IEEE Press
US $135.50 Add to Cart
  • Description
  • Table of Contents
  • Author Information
Preface.

Power Device Evolution and the Advert of IGBT.

IGBT Fundamentals and Status Review.

MOS Components of IGBT.

Bipolar Components of IGBT.

Physics and Modeling of IGBT.

Latch-Up of Parasitic Thyristor in IGBT.

Design Considerations of IGBT Unit Cell.

IGBT Process Design and Fabrication Technology.

Power IGBT Modules.

Novel IGBT Design Concepts, Structural Innovations, and Emerging Technologies.

IGBT Circuit Applications.

Index.

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