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Insulated Gate Bipolar Transistor IGBT Theory and Design
ISBN: 978-0-471-23845-4
Hardcover
648 pages
August 2003, Wiley-IEEE Press
US $135.50 Add to Cart

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  • Description
  • Table of Contents
  • Author Information
A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT.
  • All-in-one resource
  • Explains the fundamentals of MOS and bipolar physics.
  • Covers IGBT operation, device and process design, power modules, and new IGBT structures.
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