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Modern Microwave Transistors: Theory, Design, and Performance

ISBN: 978-0-471-41778-1
504 pages
December 2002
Modern Microwave Transistors: Theory, Design, and Performance (0471417785) cover image


  • Comprehensive and up-to-date coverage of currently used transistors for commercial and military applications.
  • Authors are recognized experts with previous publications.
  • Updated descriptions of state-of-the-art devices available on Wiley Web site.
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Table of Contents


Background on Microwave Transistors.

Basic Semiconductor  Physics.

Heterostructure Physics.


High Electron Mobility Transistors.


Silicon Bipolar Junction Transistors.

Heterojunction Bipolar Transistors.

Appendix A.1: Frequently Used Symbols.

Appendix A.2: Physical Constants and Unit Conversions.

Appendix A.3: Microwave Frequency Bands.

Appendix A.4: Two-Port Calculations.

Appendix A.5: Important Material Properties of Selected Materials.


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Author Information

FRANK SCHWIERZ, PhD, is head of the RF & Nanoelectronics Research Group at Technische Universität (TU) Ilmenau, Germany.
JUIN J. LIOU, PhD, is a professor in the School of Electrical and Computer Science at the University of Central Florida.
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