Device Electronics for Integrated Circuits, 3rd Edition
October 2002, ©2003
Focusing specifically on silicon devices, the Third Edition of Device Electronics for Integrated Circuits takes students in integrated-circuits courses from fundamental physics to detailed device operation. Because the book focuses primarily on silicon devices, each topic can include more depth, and extensive worked examples and practice problems ensure that students understand the details.
Currents in pn Junctions.
Bipolar Transistors I: Basic Properties.
Bipolar Transistors II: Limitations and Models.
Properties of the Metal-Oxide-Silicon System.
Mos Field-Effect Transistors I: Physical Effects and Models.
Mos Field-Effect Transistors II: High-Field Effects.
Answers to Selected Problems.
Selected List of Symbols.
- Updated MOSFET material: The authors have thoroughly revised and enhanced their coverage of MOSFETs and CMOS to bring up-to-date their coverage of these central topics in IC electronics. Their discussion brings the reader step-by-step from the basic MOSFET long-channel theory to models that describe the submicron-channel MOSFETS of today's megatransistor chips. A thorough discussion of high-field effects comprises the new Chapter 10.
- Additional coverage of current topics: The authors have updated the material on IC technology and added an overview of IC scaling trends in Chapter 2. The material on process simulation has been significantly expanded, and a brief discussion of compound semiconductors has been added, also in Chapter 2. Chapter 5 now includes a section on device simulation.
- New material on heterostructures and heterojunction devices: Material on heterostructures and heterojunction transistors (especially silicon-germanium devices) has been added to Chapters 4, 5, 6, and 7.
- Gauss' Law Section: Prompted by their experiences in teaching with earlier editions, the authors have added a section (including examples and problems) to Chapter 1 to reinforce applications of Gauss' law and aid the reader in understanding its applications to many device problems.
- "Science to applications" approach: After being introduced to the basic physics behind a topic, students are given an example device application. Applications and theory are linked throughout the book to help students fully understand each subject. Each chapter concludes with discussion of a relevant application.
- Practice at all levels: The problems included have a large range of complexity, so there is ample of material for assignments and practice. Answers are provided for alternately numbered problems.
- Helpful examples: Worked-through problems with explanations of the thought processes behind the solutions are presented throughout the text to help students understand how engineers arrive at answers in practical situations.
- Relevant and scientifically sound: The authors' experience in industry and education means that topics, examples, and problems are up-to-date and relevant in today's IC world.