Nonvolatile Semiconductor Memory Technology: A Comprehensive Guide to Understanding and Using NVSM DevicesISBN: 978-0-7803-1173-2
590 pages
October 1997, Wiley-IEEE Press
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Description
"Complete dependence on semiconductor vendors' application notes
and data sheets is now a thing of the past thanks to this
all-in-one comparison text on nonvolatile semiconductor memory
(NVSM) technology. Working electronics engineers can now refer to
this book to access the technical data and applications-focused
perspective they need to make intelligent decisions regarding the
selection, specification, procurement, and application of NVSM
devices.
The most comprehensive book in the field, NONVOLATILE SEMICONDUCTOR MEMORY TECHNOLOGY gathers expertly-written information scattered throughout device literature in a single, well-balanced volume. This book features an in-depth overview accompanied by applications-oriented chapters on device reliability and endurance, radiation tolerance, as well as device physics and design. It is an essential reference for electronics engineers."
Sponsored by:
IEEE Components, Packaging, and Manufacturing Technology Society, IEEE Solid-State Circuits Council/Society.
The most comprehensive book in the field, NONVOLATILE SEMICONDUCTOR MEMORY TECHNOLOGY gathers expertly-written information scattered throughout device literature in a single, well-balanced volume. This book features an in-depth overview accompanied by applications-oriented chapters on device reliability and endurance, radiation tolerance, as well as device physics and design. It is an essential reference for electronics engineers."
Sponsored by:
IEEE Components, Packaging, and Manufacturing Technology Society, IEEE Solid-State Circuits Council/Society.
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Table of Contents
List of Contributors.
List of Acronyms.
Foreword.
Basics of Nonvolatile Semiconductor Memory Devices (G. Groeseneken, et al.).
Floating Gate Planar Devices (H. Lin & R. Ramaswami).
Floating Gate Nonplanar Devices (H. Wegener & W. Owen).
Floating Gate Flash Devices (M. Gill & S. Lai).
SONOS Nonvolatile Semiconductor Memories (M. White & F. Libsch).
Reliability and NVSM Reliability (Y. Hsia & V. Tyree).
Radiation Tolerance (G. Messenger).
Procurement Considerations (D. Sweetman).
Bibliography (W. Brown).
Index.
Editors' Biographies.
List of Acronyms.
Foreword.
Basics of Nonvolatile Semiconductor Memory Devices (G. Groeseneken, et al.).
Floating Gate Planar Devices (H. Lin & R. Ramaswami).
Floating Gate Nonplanar Devices (H. Wegener & W. Owen).
Floating Gate Flash Devices (M. Gill & S. Lai).
SONOS Nonvolatile Semiconductor Memories (M. White & F. Libsch).
Reliability and NVSM Reliability (Y. Hsia & V. Tyree).
Radiation Tolerance (G. Messenger).
Procurement Considerations (D. Sweetman).
Bibliography (W. Brown).
Index.
Editors' Biographies.
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Author Information
About the Editors William D. Brown is a university professor and
head of the Department of Electrical Engineering at the University
of Arkansas. As a Member of the Technical Staff at Sandia
Laboratories in Albuquerque, NM, from 1969-1977, Dr. Brown
initiated Sandia s research and development effort on
metal-nitride-oxide-silicon (MNOS) device technology. After joining
the faculty at the University of Arkansas in 1977, his nonvolatile
semiconductor memory research concentrated on the synthesis and
characterization of plasma-enhanced chemical vapor deposited
(PECVD) silicon nitride for application in MNOS and SNOS memory
devices. Dr. Brown has served on IEEE NVM standards committees, and
he is an organizer and participant in the IEEE International
Nonvolatile Memory Technology Conference and its precursor
conferences.
Joe E. Brewer is a Senior Advisory Engineer at the Northrop Grumman Corporation Electronic Sensors and Systems Division located near Baltimore, MD. Throughout his 36-year engineering career, Dr. Brewer has been engaged in the development of state-of-the-art microelectronic technology. He has been both a developer and user of NVSM devices. He has had extensive experiences with MNOS block-oriented devices and storage systems, as well as a variety of SONOS devices. Dr. Brewer has also served on IEEE NVM standards committees, and he is an organizer and participant in the IEEE International Nonvolatile Memory Technology Conference and its precursor conferences.
Joe E. Brewer is a Senior Advisory Engineer at the Northrop Grumman Corporation Electronic Sensors and Systems Division located near Baltimore, MD. Throughout his 36-year engineering career, Dr. Brewer has been engaged in the development of state-of-the-art microelectronic technology. He has been both a developer and user of NVSM devices. He has had extensive experiences with MNOS block-oriented devices and storage systems, as well as a variety of SONOS devices. Dr. Brewer has also served on IEEE NVM standards committees, and he is an organizer and participant in the IEEE International Nonvolatile Memory Technology Conference and its precursor conferences.
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Nonvolatile Semiconductor Memory Technology: A Comprehensive Guide to Understanding and Using NVSM Devices (US $248.50)
-and- Nonvolatile Memory Technologies with Emphasis on Flash: A Comprehensive Guide to Understanding and Using Flash Memory Devices (US $205.00)
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