 Advanced Theory of Semiconductor Devices
ISBN: 978-0-7803-3479-3
Hardcover
352 pages
December 1999, Wiley-IEEE Press
US $135.00
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Preface.
Acknowledgments.
A Brief Review of the Basic Equations.
The Symmetry of the Crystal Lattice.
The Theory of Energy Bands in Crystals.
Imperfections of Ideal Crystal Structure.
Equilibrium Statistics for Electrons and Holes.
Self-Consistent Potentials and Dielectric Properties.
Scattering Theory.
The Boltzmann Transport Equation.
Generation-Recombination.
The Heterojunction Barrier.
The Device Equations of Shockley and Stratton.
Numerical Device Simulations.
Diodes.
Laser Diodes.
Transistors.
Future Semiconductor Devices.
Appendix A: Tunneling and the Golden Rule.
Appendix B: The One Band Approximation.
Appendix C: Temperature Dependence of the Band Structure.
Appendix D: Hall Effect and Magnetoresistance.
Appendix E: The Power Balance Equation.
Appendix F: The Self-Consistent Potential at a Heterojunction.
Appendix G: Schottky Barrier Transport.
Index.
About the Author.
Acknowledgments.
A Brief Review of the Basic Equations.
The Symmetry of the Crystal Lattice.
The Theory of Energy Bands in Crystals.
Imperfections of Ideal Crystal Structure.
Equilibrium Statistics for Electrons and Holes.
Self-Consistent Potentials and Dielectric Properties.
Scattering Theory.
The Boltzmann Transport Equation.
Generation-Recombination.
The Heterojunction Barrier.
The Device Equations of Shockley and Stratton.
Numerical Device Simulations.
Diodes.
Laser Diodes.
Transistors.
Future Semiconductor Devices.
Appendix A: Tunneling and the Golden Rule.
Appendix B: The One Band Approximation.
Appendix C: Temperature Dependence of the Band Structure.
Appendix D: Hall Effect and Magnetoresistance.
Appendix E: The Power Balance Equation.
Appendix F: The Self-Consistent Potential at a Heterojunction.
Appendix G: Schottky Barrier Transport.
Index.
About the Author.
