Advanced Theory of Semiconductor Devices
December 1999, Wiley-IEEE Press
Advanced Theory of Semiconductor Devices will help improve your understanding of computer simulation devices through a thorough discussion of basic equations, their validity, and numerical solutions as they are contained in current simulation tools. You will gain state-of-the-art knowledge of devices used in both III-V compounds and silicon technology. Specially featured are novel approaches and explanations of electronic transport, particularly in p-n junction diodes. Close attention is also given to innovative treatments of quantum level laser diodes and hot electron effects in silicon technology.
This in-depth book is designed expressly for graduate students, research scientists, and research engineers in solid state electronics who want to gain a better grasp of the principles underlying semiconductor devices.
A Brief Review of the Basic Equations.
The Symmetry of the Crystal Lattice.
The Theory of Energy Bands in Crystals.
Imperfections of Ideal Crystal Structure.
Equilibrium Statistics for Electrons and Holes.
Self-Consistent Potentials and Dielectric Properties.
The Boltzmann Transport Equation.
The Heterojunction Barrier.
The Device Equations of Shockley and Stratton.
Numerical Device Simulations.
Future Semiconductor Devices.
Appendix A: Tunneling and the Golden Rule.
Appendix B: The One Band Approximation.
Appendix C: Temperature Dependence of the Band Structure.
Appendix D: Hall Effect and Magnetoresistance.
Appendix E: The Power Balance Equation.
Appendix F: The Self-Consistent Potential at a Heterojunction.
Appendix G: Schottky Barrier Transport.
About the Author.