Wide Bandgap Light Emitting Materials And Devices
This volume deals with recent research results on wide bandgap light emitting materials, introducing new concepts for devices based on these materials. The editors, scientists with the best reputations, have invited authors from different institutions who are acknowledged researchers in the field as well as being involved in industrial applications. They represent several lines of research: III-nitride compounds, ZnO and ZnSe, the most promising materials for device applications.
III-Nitride Micro-Cavity Light-Emitters (H.X. Jiang, J.Y. Lin)
Nitride emitters - recent process (T. Wang)
ZnSeTe rediscovered:from isoelectronic centers to quantum dots (Gu, Kuskovsky, Neumark)
Optical Properties of ZnO alloys (J. Muth, A. Osinsky)
Igor L. Kuskovsky is assistant professor of Physics at Queens College of CUNY, New York. He graduated with high honours from the Physics Department of Odessa State University, Ukraine in 1991. He was awarded a Ph.D. in Applied Physics/Solid State from Columbia University in 1998. He published more than 40 scientific papers. His research interests include microstructural, electrical and electro-optical properties of wide band-gap semiconductors, optical and magneto-optical properties of wide band-gap quantum dots and nanowires as well as applications of low dimensional systems for bio-imaging.
Hongxing Jiang received his B.S. in Physics in 1981 from Fudan University, China and his Ph.D. in Physics in 1986 from Syracuse University. He is currently a University Distinguished Professor of Physics at Kansas State University. He has published 250 technical papers in the area of compound semiconductors, holds more than 10 patents (approved and pending), edited three books, and delivered over 60 invited presentations.