Preface.

Symbols and Acronyms.

INTRODUCTION.

Highest-efficiency crystalline Si solar cells.

Industrial crystalline Si solar cells.

Thin-film crystalline Si cells.

Physical problems with thin-film crystal line Si cells.

PHYSICAL LOSS MECHANISMS.

Limitations to photogeneration.

Limitations imposed by radiative recombination.

Limitations imposed by non-radiative recombination.

ADVANCED QUANTUM EFFICIENCY ANALYSIS.

Definition of effective diffusion lengths.

Reciprocity theorem for charge carrier collection.

Applications of the generalized reciprocity theorem.

Limiting recombination parameters derived from L_Q.

Analytical quantum efficiency model for thin films.

Differential and actual recombination parameters.

TECHNOLOGICAL APPROACHES TO THIN-FILM CELLS.

High-temperature substrate (HTS) approach.

Low-temperature substrate (LTS) approach.

Layer transfer process (LTP) approach.

WAFFLE CELLS FROM THE POROUS SI (PSI) PROCESS.

Epitaxy on porous Si. < ;p> Module concepts.

Optical absorption in Si waffles.

Efficiency potential.

SUMMARY AND CONCLUSIONS.

Physical limitations to power conversion.

Revealing the limitations of experimental cells.

Limitations of current thin-film approaches.

Porous Si for layer transfer.

Update.

APPENDICES.

Appendix A: Light Trapping.

Appendix B: Recombination.

Appendix C: Quantum Efficiency.

References.

Index.