Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications
The volume is devoted to the material and covers methods of epitaxial and bulk growth. Identification and characterization of defects is discussed in detail. The contributions help the reader to develop a deeper understanding of defects by combining theoretical and experimental approaches.
Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles.
The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development.
2) Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds
3) Formation of extended defects in 4H-SiC epitaxial growth and development of fast growth technique
4) Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects
5) Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches
6) EPR Identification of Intrinsic Defects in 4H-SiC
7) Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide
8) Optical properties of as-grown and process-induced stack-ing faults in 4H-SiC
9) Characterization of defects in silicon carbide by Raman spectroscopy
10) Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation
11) Identification and carrier dynamics of the dominant lifetime limiting defect in n- 4H-SiC epitaxial layers
12) Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation
13) Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation
14) Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors
15) Non-basal plane SiC surfaces: Anisotropic structures and low-dimensional electron systems
16) Comparative Columnar Porous Etching Studies on n-type 6H SiC Crystalline faces
17) Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS
18) Epitaxial Graphene: an new Material
19) Density Functional Study of Graphene Overlayers on SiC
Tsunenobu Kimoto, Professor at the Department of Electronic Science and Engineering at Kyoto University, Japan, has dedicated his work to research on the growth and characterization of wide bandgap semiconductors, the process technology and physics of SiC devices. He has authored over 300 scientific publications.
Lothar Ley is recently retired as Professor of Physics and Head of the Institute of Technical Physics at the University of Erlangen, Germany. From 2002 to 2008 he was speaker of the interdisciplinary Research Unit (DFG Forschergruppe) "Silicon carbide as semiconductor material: novel aspects of crystal growth and doping". Alongside its experimental research on SiC, his group currently also works on Diamond, Carbon Nanotubes, and Graphene. He has authored and co-authored over 400 scientific publications.
Gerhard Pensl works with his group on the growth of SiC single crystals for high power device applications, its electrical and optical characterization, and on the investigation of multi-crystalline Si for solar cells. He is Academic Director at the Institute of Applied Physics at the University Erlangen-Nürnberg, Germany, and has authored over 300 scientific publications.
Silicon Carbide: Volume 1: Growth, Defects, and Novel Applications (US $230.00)
-and- Silicon Carbide: Volume 2: Power Devices and Sensors (US $205.00)
Total List Price: US $435.00
Discounted Price: US $326.25 (Save: US $108.75)