Skip to main content

Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs and InGaAsP

Physical Properties of III-V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs and InGaAsP

Sadao Adachi

ISBN: 978-3-527-60281-0

Jan 2005

336 pages

Select type: O-Book

Description

The objective of this book is two-fold: to examine key properties of III-V compounds and to present diverse material parameters and constants of these semiconductors for a variety of basic research and device applications. Emphasis is placed on material properties not only of Inp but also of InAs, GaAs and GaP binaries.
Structural Properties.

Mechanical, Elastic, and Lattice Vibrational Properties.

Thermal Properties.

Collective Effects and Some Response Characteristics.

Electronic Energy-Band Structure.

Electron and Hole Deformation Potentials.

Optical Properties.

Elastooptic and Electrooptic Effects.

Carrier Transport Properties.

Strain Problems in InGaAs(P)-Based Heterostructures.

Concluding Remarks.

Appendix.

Indexes.