Skip to main content

Silicon Carbide

Silicon Carbide

Peter Friedrichs (Editor), Tsunenobu Kimoto (Editor), Lothar Ley (Editor), Gerhard Pensl (Editor)

ISBN: 978-3-527-41002-6

Dec 2009

980 pages

Select type: Hardcover

Out of stock

$350.00

Description

This work covers the status and upcoming challenges of Silicon Carbide (SiC) Electronics with special attention to industrial application. With a list of contributors reading like the "Who's Who" in SiC R&D, from industrial, governmental and academic research (GE, CREE Inc., Honda, Toshiba, Nissan, Infineon, University of Erlangen-Nurnberg, NASA, Fraunhofer ISE, Naval Research Lab, Rensselaer Polytechnic Institute, Kyoto University), this text strongly benefits from collaborations between research institutions and enterprises active in SiC crystal growth and device development.
VOL 1: Growth, Defects, and Novel Applications
1) Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution
2) Bulk and Epitaxial Growth of Micropipe-free Silicon Carbide on Basal and Rhombohedral Plane Seeds
3) Formation of extended defects in 4H-SiC epitaxial growth and development of fast growth technique
4) Fabrication of High Performance 3C-SiC Vertical MOSFETs by Reducing Planar Defects
5) Identification of intrinsic defects in SiC: Towards an understanding of defect aggregates by combining theoretical and experimental approaches
6) EPR Identification of Intrinsic Defects in 4H-SiC
7) Electrical and Topographical Characterization of Aluminum Implanted Layers in 4H Silicon Carbide
8) Optical properties of as-grown and process-induced stack-ing faults in 4H-SiC
9) Characterization of defects in silicon carbide by Raman spectroscopy
10) Lifetime-killing defects in 4H-SiC epilayers and lifetime control by low-energy electron irradiation
11) Identification and carrier dynamics of the dominant lifetime limiting defect in n- 4H-SiC epitaxial layers
12) Optical Beam Induced Current Measurements: principles and applications to SiC device characterisation
13) Measurements of Impact Ionization Coefficients of Electrons and Holes in 4H-SiC and their Application to Device Simulation
14) Analysis of interface trap parameters from double-peak conductance spectra taken on N-implanted 3C-SiC MOS capacitors
15) Non-basal plane SiC surfaces: Anisotropic structures and low-dimensional electron systems
16) Comparative Columnar Porous Etching Studies on n-type 6H SiC Crystalline faces
17) Micro- and Nanomechanical Structures for Silicon Carbide MEMS and NEMS
18) Epitaxial Graphene: an new Material
19) Density Functional Study of Graphene Overlayers on SiC

VOL 2: Power Devices and Sensors
1) Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices
2) Silicon Carbide power devices -
Status and upcoming challenges with a special attention to industrial application
3) Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts
4) Reliability aspects of SiC Schottky Diodes
5) Design, process, and performance of all-epitaxial normally-off SiC JFETs
6) Extreme Temperature SiC Integrated Circuit Technology
7) 1200 V SiC Vertical-channel-JFET based cascode switches
8) Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors
9) High electron mobility ahieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen
10) 4H-SiC MISFETs with Nitrogen-containing Insulators
11) SiC Inversion Mobility
12) Development of SiC diodes, power MOSFETs and intellegent Power Modules
13) Reliability issues of 4H-SiC power MOSFETs toward high junction temperature operation
14) Application of SiC-Transistors in Photovoltaic-Inverters
15) Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs,and GTOs
16) Suppressed surface recombination structure and surface passivation for improving current gain of 4H-SiC BJTs
17) SiC avalanche photodiodes and photomultipliers for ultraviolet and solar-blind light detection